| PART |
Description |
Maker |
| DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DP500 |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| DP030 |
-300 mA, PNP silicon transistor
Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp]
KODENSHI KOREA CORP.
|
| DN100 |
Extremely low collector-to-emitter saturation voltage
Suitable for low voltage large current drivers
|
KODENSHI KOREA CORP.
|
| DN500P |
Extremely low collector-to-emitter saturation voltage
NPN Silicon Transistor
|
KODENSHI KOREA CORP.
AUK corp
|
| DN500 |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| 2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2SD874A |
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
